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| GP1S39 GP1S39 s Features 1. Ultra-compact package 2. PWB mounting type 3. Double-phase phototransistor output type for detecting of rotation direction and count 4. Wide gap between light emitter and detector: 1.5mm 5. Slit width: 0.8mm 6. Detecting pitch: 0.6mm Subminiature, Double-phase Output, Wide Gap Photointerrupter s Outline Dimensions 1 2 PT1 PT2 ( Unit : mm ) 5 4 3 1 2 3 4 5 Anode Cathode Emitter2 Emitter1 Collector Internal connection diagram 4.5 1.5 Center of light path (0.7) 1.5 B A 4.0 1.5 (C0.4) 3.5 (0.7) (C0.3) 0.15 + 0.2 - 0.1 g 3.14 5 1 0.4 g 1.27 4.0MIN. g 1.27 A-A' section Slit width of emitter side (0.8) s Applications 1. Mouses 2. Cameras B' A' Rest of gate (2) B-B' section (1.0 ) (0.37) (0.37) 4 3 2 s Absolute Maximum Ratings Parameter Forward current Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Total power dissipation Operating temperature Storage temperature *1 Soldering temperature *1 For 5 seconds ( Ta = 25C ) Rating 50 6 75 35 6 20 75 100 - 25 to + 85 - 40 to + 100 260 Unit mA V mW V V mA mW mW C C C * Tolerance: 0.2mm * Burr's dimensions: 0.15MAX. * Rest of gate: 0.3MAX. * ( ) : Reference dimensions * The dimensions indicated by g refer to those measured from the lead base. * Internal elements are appeared because of thin external mold resin marked Input Output IC PC P tot Topr Tstg Tsol Soldering area " In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device." 1mm or more Symbol IF VR P V CE1O V CE2O V E 1CO V E 2CO 4.7 GP1S39 s Electro-optical Characteristics Input Output Transfer characteristics Parameter Forward voltage Reverse current Collector dark current Collector current Collector current ratio Collector-emitter saturation voltage Rise time Response time Fall time Symbol VF IR ICEO IC IC1 /I C2 V CE(sat) tr tf Conditions IF = 20mA VR = 3V VCE = 20V VCE = 5V, I F = 4mA VCE = 5V, I F = 4mA IF = 8mA, I C = 50 A VCE = 5V, I C = 100 A RL = 1 000 MIN. 130 0.67 TYP. 1.2 50 50 ( Ta = 25C ) MAX. 1.4 10 100 520 1.5 0.4 150 150 Unit V A nA A V s s Fig. 1 Forward Current vs. Ambient Temperature 60 Fig. 2 Power Dissipation vs. Ambient Temperature 120 P tot 50 Forward current I F ( mA ) Power dissipation P ( mW ) 100 40 80 P, P c 30 60 20 40 10 0 - 25 20 0 - 25 0 25 50 75 85 100 0 25 50 75 85 100 Ambient temperature T a ( C ) Ambient temperature T a ( C ) Fig. 3 Forward Current vs. Forward Voltage 500 200 Forward current I F ( mA ) 100 50 20 10 5 2 1 0 0.5 1 1.5 2 2.5 3 Forward voltage VF ( V ) T a = 75C 50C 25C 0C - 25C Fig. 4 Collector Current vs. Forward Current 1.0 Collector current I C ( mA ) VCE = 5V T a = 25C 0.8 0.6 0.4 0.2 0 0 5 Forward current I F ( mA ) 10 GP1S39 Fig. 5 Collector Current vs. Collector-emitter Voltage 5.0 Collector current I C ( mA ) T a = 25C 300 Fig. 6 Collector Current vs. Ambient Temperature 400 VCE=5V IF=4mA 4.0 I F = 50mA 40mA 3.0 30mA 2.0 20mA 10mA 4mA 0 0 2 4 6 8 10 Collector current I C ( A) 200 100 1.0 - 25 0 25 50 75 85 Collector-emitter voltage V CE ( V ) Ambient temperature T a ( C ) Fig. 7 Collector-emitter Saturation Voltage vs. Ambient Temperature 0.16 Collector-emitter saturation voltage VCE( sat) (V ) I F = 8mA I C= 50 m A Fig. 8 Collector Dark Current vs. Ambient Temperature 10 - 6 5 V CE = 20V Collector dark current I CEO (A) 0 25 50 75 85 0.14 2 10 - 7 5 2 0.12 0.10 10 - 8 5 2 0.08 0.06 10 - 9 5 2 10 - 25 Ambient temperature Ta ( C ) - 10 0 25 50 75 100 Ambient temperature T a ( C ) Fig. 9 Response Time vs. Load Resistance 500 V CE = 5V I C = 100mA T a = 25C Response time ( ms ) 100 td Input 10 ts RD VCC RL Output Output 10% 90% td tr 1 0.5 1 10 Load resistance RL ( k ) 50 ts tf Input tr tf Test Circuit for Response Time GP1S39 Fig.10 Relative Collector Current vs. Shield Distance ( 1 ) L= 0 + Fig.11 Relative Collector Current vs. Shield Distance ( 2 ) Shield L Relative collector current ( % ) 100 90 80 70 60 50 40 30 20 10 L I F = 4mA V CE = 5V T a = 25C 0.5 1 1.5 2 Shield distance L ( mm ) L= 0 + Relative collector current ( % ) 100 90 80 70 60 50 40 30 20 10 1 2 3 Shield I F = 4mA V CE = 5V T a = 25C 4 Shield distance L ( mm ) q Please refer to the chapter "Precautions for Use". |
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